Sungkyunkwan University

성균관대학교 로고

Truly, Global Leading University SKKU
메뉴버튼

성균관대학교 로고

Truly, Global Leading University SKKU
검색버튼
search form

성균관대학교 로고

메뉴닫기

SKKU News

home Campus Life SKKU NewsSKKU News

게시물 상세보기
TITLE Creation of Two-Terminal Tunneling Random Access Memory (TRAM) Inspired by Brain Neurons
POSTER 김민선 NO 2471
DATE 2018.02.28 17:15:36 HIT 1344

A new memory device inspired by the neuron connections of the human brain has been designed. The research, published in Advanced Materials as a back cover paper, highlights the device's highly reliable performance, long retention time, and endurance. Moreover, its flexibility makes it a promising tool for the next-generation soft electronics attached to clothes or the body. The brain is able to learn and memorize thanks to a huge number of connections between neurons. The information humans memorize is transmitted through synapses from one neuron to the next as an electro-chemical signal. Inspired by these connections, scientists constructed a memory called two-terminal tunneling random access memory (TRAM), where two electrodes referred to as 'drain' and 'source' resemble the two communicating neurons of the synapse.

 

TRAM is made up of a stack of one-atom-thick or a few-atoms-thick 2D crystal layers: the semiconductor molybdenum disulfide (drain and source), a tunneling insulator of aluminum oxide (Al2O3), and a floating gate of graphene layer. The researchers secured a large-area memory integration technology using a large-area grown graphene and a two-dimensional semiconductor through chemical vapor deposition (CVD). In simple terms, memory creates program (logical-0) and erase (logical-1) states by charging and discharging the graphene floating gate through the h-BN tunneling barrier. By effective charge tunneling through the crystalline h-BN layer and storing charges in the graphene layer, TRAM demonstrates an ultimately low off-state current of 10-14 A, leading to ultra high off/on ratio over 109 about 103 times higher than other two-terminal memories. Furthermore, the absence of thick, rigid blocking oxides enables high flexibility, which is useful for soft electronics. Our memory device can be useful for next-generation neuromorphic systems and wearable, body-attachable electronics in the near future.

 

 

 

 

 

 

 

Tunneling-memory fabricated by stacking 2D graphene and molybdenum sulfide

PREV/NEXT
PREV Research on Short Career Horizons and Firm Innovation by Prof. Sang Kyun KIM
NEXT SKKU Ranks 100th in the QS World University Rankings, Rising from 108th Last Year
vision 2020
  • Global Power Elite
  • Research with Impact
  • Globally First Choice
  • Pride in Top
HUMANITIES AND SOCIAL SCIENCES CAMPUS: (03063) 25-2, SUNGKYUNKWAN-RO, JONGNO-GU, SEOUL, KOREA
NATURAL SCIENCES CAMPUS: (16419) 2066, SEOBU-RO, JANGAN-GU, SUWON-SI, GYEONGGI-DO, KOREA

COPYRIGHT ⓒ 2014 SUNGKYUNKWAN UNIVERSITY ALL RIGHTS RESERVED. Contact us