The research team led by Prof. Jin Hong PARK of the School of Electronic and Electrical Engineering successfully demonstrated high-performance photodetectors using nano semiconductors. There are three developments within the study and they were published in Advanced Materials between June ~ August.
[1] High Performance WSe2/h-BN Photodetector using a Triphenylphosphine(PPh3)-Based n-Doping Technique
[2] High-Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment
[3] Broad Detection Range Rhenium Diselenide Photodetector Enhanced by (3-Aminopropyl) Triethoxysilane and Triphenylphosphine Treatment
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